Electronic transport in heterostructures of chemical vapor deposited graphene and hexagonal boron nitride.
نویسندگان
چکیده
CVD graphene devices on stacked CVD hexagonal boron nitride (hBN) are demonstrated using a novel low-contamination transfer method, and their electrical performance is systematically compared to devices on SiO(2). An order of magnitude improvement in mobility, sheet resistivity, current density, and sustained power is reported when the oxide substrate is covered with five-layer CVD hBN.
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ورودعنوان ژورنال:
- Small
دوره 11 12 شماره
صفحات -
تاریخ انتشار 2015